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DMN10H220LQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 1.6A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H220LQ-13
- Description：MOSFET N-CH 100V 1.6A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：220mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：401 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN10H220LQ-13
Single FETs, MOSFETs Overview
The DMN10H220LQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage rating of 100V and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 1.6A at 25°C, with a static drain-source on-resistance of 220mΩ at VGS=10V and 250mΩ at VGS=4.5V. Packaged in an SOT-23 case, it supports a total power dissipation of 1.3W at 25°C.
Single FETs, MOSFETs Feature Summary
- Qualified to AEC-Q101 standards for high reliability automotive applications
- Low on-resistance and low input capacitance for efficient switching
- Totally lead-free and fully RoHS compliant construction
- PPAP capable for automotive supply chain requirements
Single FETs, MOSFETs Applications
- Load Switch
- Automotive electronic circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantities and reel specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free definitions, prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a 100V rated N-channel MOSFET in an SOT-23 package is required for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Verify thermal management capabilities against the provided transient thermal resistance data.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series targets automotive and general-purpose switching applications requiring robust performance in small surface-mount packages. The DMN10H220LQ variant specifically addresses needs for moderate current handling with low conduction losses.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Cross-referencing parameters such as RDS(ON), BVDSS, and package dimensions is essential to ensure functional compatibility without modifying the existing circuit layout.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
