DMN10H220LVT-13

$0.14

Description：MOSFET N-CH 100V 1.87A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6e4ae5219fae Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H220LVT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 1.87A TSOT26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H220LVT-13

Description：MOSFET N-CH 100V 1.87A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.87A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：401 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.67W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for DMN10H220LVT-13

DMN10H220LVT-13

Single FETs, MOSFETs Overview

The DMN10H220LVT-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 100V and a continuous drain current of 2.24A at 25°C. The device offers a maximum on-resistance of 220mΩ at VGS=10V and 250mΩ at VGS=4.5V. Total gate charge is 8.3nC at VGS=10V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.67W at 25°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
Halogen and antimony free, classified as a "Green" device.

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions
Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable regulatory standards for your region. Ensure compatibility with existing PCB layouts and thermal management designs before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and low on-resistance are required in a compact TSOT26 package. Consider the gate threshold voltage characteristics for logic-level driving requirements. Evaluate thermal resistance parameters against the expected operating environment and duty cycle constraints.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 surface-mount case. The device is designed for general-purpose switching applications requiring efficient power handling in small form factors.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other DMN series parts or similar 100V N-channel MOSFETs in TSOT26 packages. Verify pinout compatibility and electrical parameter overlaps such as RDS(on) and BVDSS before substitution.