DMN10H700S-13

Single FETs, MOSFETs Overview

The DMN10H700S-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 0.70A at +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 700mΩ at VGS = 10V and 900mΩ at VGS = 6.0V. Packaged in an SOT-23 surface-mount case, it supports a junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
• Features low gate threshold voltage and low input capacitance to facilitate fast switching speeds.
• Qualified to AEC-Q101 standards for high reliability automotive applications.

Single FETs, MOSFETs Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal and electrical limits outlined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT-23 package is required for 100V switching applications with moderate current demands up to 0.70A. Consider the RDS(ON) values at both 10V and 6.0V gate drive voltages to ensure compatibility with the system's logic levels. Evaluate the thermal resistance characteristics against the expected power dissipation requirements.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT-23 case with a matte tin finish over an alloy leadframe. The device is designed for general-purpose switching and power management tasks requiring small surface mount footprints.

Single FETs, MOSFETs Replacement Considerations

Check for alternative Diodes Incorporated parts such as the DMN10H700S-7, which shares identical electrical specifications but differs in packaging quantity (3,000 units per tape and reel). Verify pinout compatibility and thermal performance before substituting.