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DMN10H700S-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 700MA SOT23. Review the specifications below when checking this part for your BOM.
The DMN10H700S-7 is a 100V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SOT23 surface-mount package. It features a maximum drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of 0.70A at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 700mΩ at VGS=10V and 900mΩ at VGS=6.0V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 2.0V to 4.0V, total gate charge (Qg) of 4.6nC, and input capacitance (Ciss) of 235pF. Thermal characteristics specify a junction-to-ambient thermal resistance (RθJA) of 303°C/W on a standard FR-4 board, with an operating temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. The DMN10H700S-7 variant corresponds to a tape and reel configuration with a factory pack quantity of 3,000 units. Confirm that the component meets all required environmental compliance standards, including RoHS and lead-free plating specifications, prior to integration into final assemblies.
Select this component when a compact N-channel MOSFET with a 100V rating and low gate threshold voltage is required. The device is optimized for applications needing fast switching speeds and low input capacitance within a minimal footprint. Ensure the design accommodates the thermal constraints associated with the SOT23 package and the specified RDS(ON) values under expected load conditions.
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing advanced silicon solutions for portable and battery-operated electronics. The DMN10H700S specifically targets markets requiring robust performance in limited space, leveraging the company's proprietary process technology to balance conduction losses with switching dynamics.
Consult the manufacturer's datasheet or official substitution guides for verified equivalent parts. Cross-referencing requires matching critical parameters such as VDSS, ID, RDS(ON), package type, and pinout configuration to ensure functional compatibility without circuit modification.
The maximum pulsed drain current (IDM) is 2.5A, measured with a 10μs pulse duration and a duty cycle less than or equal to 1%.
Yes, the device is qualified to AEC-Q101 standards, indicating it is designed for high reliability and suitable for automotive environments.
The typical reverse recovery time (tRR) is 22ns, measured at VR=100V, IF=1.8A, and di/dt=100A/μs.
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