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DMN1260UFA-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 500MA 3DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1260UFA-7B
- Description：MOSFET N-CH 12V 500MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：366mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.96 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0806-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN1260UFA-7B
Single FETs, MOSFETs Overview
The DMN1260UFA-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 12V and a continuous drain current (ID) of 0.5A at 25°C. The device offers low on-state resistance, specified as a maximum of 366mΩ at VGS = 4.5V and ID = 200mA. It operates within a junction temperature range of -55°C to +150°C and utilizes an X2-DFN0806-3 surface mount package.
Single FETs, MOSFETs Feature Summary
- Ultra-low profile 0.4mm package with a compact footprint significantly smaller than standard SOT23 packages
- Integrated gate protection diode for enhanced circuit reliability
- Low input capacitance and optimized switching performance for high efficiency power management
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- Load Switching
- Power Management Functions
- Portable Power Adaptors
Single FETs, MOSFETs Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS37122 Rev. 3-2 to confirm technical specifications. Ensure the ordering suffix matches the required tape and reel packaging configuration. Cross-reference the manufacturer part number to validate authenticity and compliance with environmental directives before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with a 12V rating. Evaluate the specific on-resistance requirements at your operating gate voltage, as RDS(ON) varies significantly between 1.5V and 4.5V drive levels. Confirm that the thermal dissipation capabilities align with your system's ambient conditions and PCB layout constraints.
Single FETs, MOSFETs Part Context
This component belongs to the DMN1260UFA series of silicon N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for space-constrained portable electronics where minimizing board area is critical while maintaining efficient power handling capabilities in low-voltage environments.
Single FETs, MOSFETs Replacement Considerations
Consult the official Diodes Incorporated documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or generic voltage ratings without verifying electrical parameters.
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