DMN12M8UCA10-7

$0.72

Description：MOSFET 2N-CH 12V X4-DSN3015-10
Series：-

SKU:cbb7052eeeba Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V X4-DSN3015-10
Series：-
Mfr：Diodes Incorporated
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Rds On (Max) @ Id, Vgs：2.8mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs：36.4nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：2504pF @ 10V
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：X4-DSN3015-10
Grade：-
Qualification：-

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DMN12M8UCA10-7

Overview

The DMN12M8UCA10-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in the X4-DSN3015-10 footprint measuring 2.98mm x 1.49mm with a height of 0.11mm. It features a source-source breakdown voltage (BVSSS) of 12V and a maximum continuous source current of 25A at TA = +25°C. The static source-source on-resistance (RSS(ON)) is typically 2.4mΩ at VGS = 3.8V and 6A. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low profile CSP package designed for high efficiency power management applications
Integrated ESD protection for the gate terminal
Totally lead-free and fully RoHS compliant construction

Applications

Battery Management Systems
Load Switching circuits
Battery Protection modules

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS44101 Rev. 2-2 to confirm authenticity. Ensure the ordering suffix matches the specified tape and reel packing quantity. Check for compliance with automotive quality standards if required by the specific application environment.

Selection Notes

Select this component when a low-profile surface mount solution is required for 12V battery systems. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient conditions. Confirm that the gate threshold voltage aligns with the available drive voltage levels in the target circuit design.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the X4-DSN3015-10 package technology to provide a compact form factor suitable for space-constrained portable electronics and power management designs.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in the design.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.