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DMN13H750S-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 130V 1A SOT23. Review the specifications below when checking this part for your BOM.
The DMN13H750S-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage rating of 130V and a continuous drain current of 1.0A at +25°C. The device offers a maximum on-resistance of 0.75Ω at VGS=10V and 0.85Ω at VGS=6.0V. Packaged in an SOT-23 surface-mount case, it operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives including RoHS and REACH requirements before finalizing procurement specifications.
Select this component when a 130V N-channel MOSFET is required in an SOT-23 package. Ensure the application gate drive voltage supports the specified RDS(ON) thresholds. Verify thermal dissipation capabilities against the junction-to-ambient resistance values provided in the datasheet.
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 plastic molded case. The product line targets general-purpose switching and power management solutions.
The datasheet lists DMN13H750S-7 as an alternative packaging option for the same electrical device. No other cross-references or substitute part numbers are documented in the official source material.
The maximum Drain-Source Voltage (VDSS) is rated at 130V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
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