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DMN14M8UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN14M8UFDF-7
- Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：14.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29.5 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1246 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN14M8UFDF-7
Single FETs, MOSFETs Overview
The DMN14M8UFDF-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a drain-source voltage of 12V and a maximum continuous drain current of 14.7A at Ta = +25°C. The device exhibits a low on-resistance of 6.0mΩ max at VGS = 4.5V and 9.0mΩ max at VGS = 2.5V. Total power dissipation reaches 1.1W at Ta = +25°C with a thermal resistance of 109.5°C/W. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low-profile 0.6mm design suitable for space-constrained applications
- Minimized on-state resistance combined with superior switching performance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device
Single FETs, MOSFETs Applications
- General purpose interfacing switches
- Power-management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable automotive quality standards if required for the target application. Ensure compliance with environmental directives such as RoHS 3 and halogen-free definitions before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for high-efficiency power management where low profile and minimal footprint are critical. Evaluate the 12V rating and 14.7A current capability against circuit requirements. Consider the low gate threshold voltage for compatibility with various drive levels. Assess thermal performance based on the specified junction-to-ambient resistance values.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications. The U-DFN2020-6 package provides a compact solution with a PCB footprint of 4mm², facilitating efficient board layout in modern electronic designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume functional equivalence with other MOSFETs without verifying pinout, electrical ratings, and package dimensions.
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