DMN15H310SK3-13

$0.77

Description：MOSFET N-CH 150V 8.3A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1de84bd043d2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN15H310SK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 150V 8.3A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN15H310SK3-13

Description：MOSFET N-CH 150V 8.3A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：8.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：310mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：405 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：32W (Ta)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DMN15H310SK3-13

DMN15H310SK3-13

Single FETs, MOSFETs Overview

The DMN15H310SK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 150V and a continuous drain current of 8.3A at case temperature +25°C. The device exhibits a maximum on-resistance of 310mΩ at VGS=10V and 330mΩ at VGS=5.0V. Total power dissipation reaches 32W at +25°C case temperature. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO252 (DPAK) package.

Single FETs, MOSFETs Feature Summary

Low on-resistance minimizes conduction losses for high-efficiency power management
Small form factor thermally efficient package enables higher density end products
Qualified to AEC-Q101 standards for automotive high reliability applications

Single FETs, MOSFETs Applications

Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure compatibility with the specified TO252 (DPAK) footprint during procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 150V breakdown voltage with moderate current handling capabilities up to 8.3A. Consider the thermal resistance characteristics and package size constraints for heat dissipation requirements. Evaluate gate drive voltage levels against the specified RDS(ON) thresholds to ensure optimal switching performance and efficiency in the target application.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of advanced N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications where low on-state losses are critical. The device integrates fast switching capabilities within a compact DPAK package, suitable for space-constrained designs requiring robust electrical performance.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers or different series without validating pinout, voltage ratings, and thermal specifications against the original datasheet.