DMN15M3UCA6-7

$0.29

Description：MOSFET 2N-CH 14V X3-DSN2718-6
Series：-

SKU:a1d067ef1d04 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 14V X3-DSN2718-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：-
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：14V
Current - Continuous Drain (Id) @ 25°C：16.5A (Ta)
Rds On (Max) @ Id, Vgs：5.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：2360pF @ 6V
Power - Max：1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X3-DSN2718-6
Grade：-
Qualification：-

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DMN15M3UCA6-7

Overview

The DMN15M3UCA6-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a source-source configuration with a breakdown voltage of 14.5V and a maximum continuous source current of 16.5A at +25°C. The device achieves a typical on-resistance of 4.8mΩ at VGS = 3.8V. It utilizes an X3-DSN2718-6 package measuring 2.70mm × 1.81mm with a height of 0.21mm. Key electrical parameters include a gate-source voltage rating of ±12V, total gate charge of 35.2nC, and power dissipation of 1.0W on a minimum FR-4 PCB.

Feature Summary

Low profile CSP footprint designed for high-efficiency power management applications
Integrated ESD protection circuitry on the gate terminal
Halogen and antimony free compliant with RoHS directives

Applications

Battery Management Systems
Load Switching circuits
Battery Protection modules

Procurement Notes

Verify the specific ordering suffix '-7' to confirm the tape and reel packaging quantity of 3000 units. Ensure the component matches the X3-DSN2718-6 case outline and NiAu or NiPdAu terminal finish. Confirm compliance with J-STD-020 moisture sensitivity level 1 requirements before integration into the assembly process.

Selection Notes

Select this component when low on-resistance is critical for minimizing conduction losses in compact designs. The 14.5V rating suits low-voltage battery systems. Verify that the 0.21mm height constraint fits within the mechanical envelope. Evaluate thermal resistance values against the expected duty cycle and ambient temperature conditions.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It represents a newer generation design optimized for low on-state resistance while maintaining switching performance. The product line targets portable electronics and automotive applications requiring small surface mount packages.