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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V X4-DSN2117-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Ta)
- Rds On (Max) @ Id, Vgs：5.1mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 840µA
- Gate Charge (Qg) (Max) @ Vgs：36.6nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：59pF @ 10V
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFBGA, WLCSP
- Supplier Device Package：X4-DSN2117-6
- Grade：-
- Qualification：-
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Overview
The DMN15M5UCA6-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a source-source configuration with a breakdown voltage of 12V and a maximum continuous source current of 16.5A at 25°C. The device achieves a typical on-resistance of 4.3mΩ at VGS = 3.8V. It utilizes an X4-DSN2117-6 package measuring 2.14mm x 1.67mm with a height of 0.11mm. Operating temperatures range from -55°C to +150°C, and it includes gate ESD protection.
Feature Summary
- Ultra-low profile CSP package designed for space-constrained applications
- Integrated electrostatic discharge protection circuitry on the gate terminal
- Optimized for high-efficiency power management through minimized on-state resistance
Applications
- Battery Management Systems
- Load Switching Circuits
- Battery Protection Modules
Procurement Notes
Verify component authenticity using official Diodes Incorporated channels. Confirm that the ordering suffix '-7' corresponds to the standard tape and reel packaging format containing 3000 units per reel. Ensure compliance with RoHS directives and confirm lead-free status prior to procurement.
Selection Notes
Select this component when low profile dimensions are critical due to its 0.11mm height. Evaluate thermal performance based on the specific PCB copper area, as power dissipation varies significantly between minimum pad layouts and larger heat-sinking configurations. Verify gate drive voltage compatibility with the specified threshold characteristics.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It represents a newer generation design focused on minimizing on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions requiring compact footprints.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified equivalent parts. Cross-referencing requires matching the 12V breakdown voltage, 4.3mΩ on-resistance, and X4-DSN2117-6 package dimensions to ensure functional interchangeability.
