DMN16M0UCA6-7

$0.20

Description：MOSFET 2N-CH 12V 17A X4-DSN2112
Series：-

SKU:21a451e4fb82 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V 17A X4-DSN2112
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：17A (Ta)
Rds On (Max) @ Id, Vgs：5.9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X4-DSN2112-6
Grade：-
Qualification：-

Download product information

DMN16M0UCA6-7

Overview

The DMN16M0UCA6-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a source-source configuration with a breakdown voltage of 12V and a maximum continuous source current of 17A at +25°C. The device achieves a typical on-resistance of 4.8mΩ at VGS=3.8V. Packaged in the X4-DSN2112-6 footprint measuring 2.11mm x 1.18mm, it supports a gate-source voltage of ±8V and operates within a temperature range of -55°C to +150°C.

Feature Summary

Low profile height of 0.11mm for space-constrained designs
Integrated ESD protection diodes on both gates
Totally lead-free and fully RoHS compliant construction

Applications

Battery management systems
Load switching circuits
Battery protection modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the X4-DSN2112-6 package dimensions align with your PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 standards during storage and handling procedures.

Selection Notes

Select this component when low on-state resistance is critical for high-efficiency power management. The dual-source architecture allows for flexible circuit configurations. Verify thermal dissipation capabilities against your specific load conditions and ambient operating temperatures.

Part Context

This part belongs to Diodes Incorporated's advanced MOSFET portfolio designed for minimizing conduction losses while maintaining superior switching performance. It utilizes silicon technology optimized for portable applications and efficient power distribution networks.