DMN2002UFG-13

Single FETs, MOSFETs Overview

The DMN2002UFG-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an ultra-low on-state resistance of 1.4mΩ at VGS=10V and 2.4mΩ at VGS=2.5V, supporting a continuous drain current of 180A at TC=+25°C. The device utilizes the PowerDI3333-8 package, which occupies only 33% of the board area compared to SO-8 packages. Key electrical parameters include a gate-source voltage rating of ±12V, total gate charge of 99nC at VGS=10V, and a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Minimizes on-state losses through exceptionally low RDS(ON) while maintaining superior switching performance for high-efficiency power management.
• Utilizes a thermally efficient PowerDI3333-8 package that reduces board footprint by 33% compared to SO-8 equivalents.
• Ensures robust end-application reliability with 100% Unclamped Inductive Switching (UIS) testing in production.
• Compliant with RoHS directives and manufactured as a halogen and antimony-free "Green" device.

Single FETs, MOSFETs Applications

• Backlighting circuits
• Power-management functions
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The DMN2002UFG-13 designation indicates a tape and reel packing quantity of 3,000 units. Confirm that the required packaging format aligns with your assembly equipment capabilities before placing orders. Ensure compliance with moisture sensitivity level 1 handling requirements during storage and manufacturing processes.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current density within a minimal surface area constraint. The low thermal resistance from junction to case facilitates effective heat dissipation in compact designs. Evaluate the gate threshold voltage characteristics against your driver logic levels to ensure reliable turn-on across the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. These devices are engineered specifically for high-efficiency power management applications where minimizing conduction losses is critical. The series leverages advanced silicon technology to deliver high current capabilities within small form factor packages suitable for modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and electrical characteristics to ensure functional compatibility without circuit modification.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of 500A with a pulse duration of 380µs and a duty cycle of 1%.

Is the device qualified for automotive applications?

For automotive applications requiring AEC-Q100/101/104/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, contact Diodes Incorporated or a local representative directly.