DMN2004DMK-7

Overview

The DMN2004DMK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent N-channel transistors within a single SOT26 surface-mount package. The device supports a drain-source voltage of 20 V and a steady-state drain current of 540 mA at +25°C, with a maximum power dissipation of 225 mW. Key electrical parameters include a gate threshold voltage ranging from 0.5 V to 1.0 V and a static drain-source on-resistance of up to 0.9 Ω at VGS = 1.8 V. The component operates across a temperature range of -65°C to +150°C and meets AEC-Q101 standards for high reliability.

Feature Summary

• Dual N-channel configuration integrating two independent transistors in one compact SOT26 package
• Low on-resistance and low gate threshold voltage for efficient switching performance
• Fast switching speed combined with low input capacitance and leakage currents
• Qualified to AEC-Q101 standards ensuring high reliability for automotive applications

Applications

• Battery management systems requiring dual switch control
• Power distribution circuits in automotive electronics
• Load switching applications in portable devices
• General purpose low-side switching in consumer electronics

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format when sourcing components. Confirm that the received parts match the DMN2004DMK marking code and date code key specifications outlined in the official datasheet. Ensure compliance with RoHS and halogen-free requirements as defined by the manufacturer's green product standards before integration into final assemblies.

Selection Notes

Select this component when a design requires two isolated N-channel switches in a minimal footprint. The SOT26 package provides thermal and space advantages over discrete single transistors. Evaluate the 0.9 Ω maximum on-resistance at low gate voltages to ensure compatibility with available drive signals. Consider the 225 mW power dissipation limit and thermal resistance characteristics for adequate heat sinking or PCB layout planning.

Part Context

The DMN2004DMK belongs to Diodes Incorporated's DMN series of dual N-channel MOSFETs. This series focuses on providing integrated solutions for space-constrained designs while maintaining automotive-grade reliability. The SOT26 package variant offers a distinct pinout and physical profile compared to other packages in the family, such as SC-88 or SOT-23 configurations.

Replacement Considerations

Direct replacements must maintain the dual N-channel topology and SOT26 package dimensions. Verify that substitute components meet the 20 V drain-source voltage rating and provide comparable on-resistance values at similar gate drive conditions. Check for equivalent AEC-Q101 qualification if automotive usage is required.