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The DMN2004DWKQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 540 mA at 25°C. The device exhibits a low on-resistance (Rds(on)) of 900 mΩ at Vgs = 4.5 V and Id = 540 mA. Packaged in an SC-88 surface-mount format, it supports a junction temperature range from -55°C to 150°C with a power dissipation rating of 250 mW. This component holds AEC-Q101 automotive qualification.
Verify the specific suffix 'Q' indicates automotive grade compliance against the official Diodes Incorporated datasheet. Confirm the package type matches the required SC-88 form factor. Ensure the ordering code includes the '-7' tape and reel designation if automated assembly is planned. Cross-reference the manufacturer part number directly to avoid counterfeit components.
Select this component when a dual N-channel topology is required within a minimal footprint. The 20 V rating suits low-voltage DC bus applications. Verify that the 540 mA current capacity meets the load requirements. Consider the thermal dissipation limits in enclosed environments. Compare input capacitance values against high-speed switching needs.
This part belongs to the DMN2004 series of dual MOSFETs from Diodes Incorporated. It serves as the automotive-qualified variant of the standard DMN2004DWK-7. The series targets applications requiring reliable switching in harsh environments. It complements single-channel options by providing dual functionality in one package.
The DMN2004DWK-7 is the non-automotive equivalent. Verify pinout compatibility before substitution. Check if the lower qualification standards of the non-Q version meet the system requirements. Ensure the Rds(on) and current ratings remain sufficient for the application.