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DMN2004K-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 630MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2004K-7
- Description：MOSFET N-CH 20V 630MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：630mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2004K-7
Single FETs, MOSFETs Overview
The DMN2004K-7 is an N-channel enhancement mode MOSFET in a SOT23 package. It features a drain-source voltage (BVDSS) of 20V and a maximum on-resistance (RDS(on)) of 0.55Ω at VGS = 4.5V with ID = 540mA, or 0.9Ω at VGS = 1.8V with ID = 350mA. The steady-state drain current is 630mA at +25°C and 450mA at +85°C for VGS = 4.5V. Total power dissipation is 350mW with a thermal resistance of 357°C/W. Operating temperature range is -65°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Includes internal ESD protection rated up to 2kV.
- Compliant with RoHS directives and halogen/antimony-free standards.
Single FETs, MOSFETs Applications
- DC-DC converters
- Power-management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging quantity of 3000 units as documented in the official Diodes Incorporated datasheet. Confirm that the required automotive grade variants are not needed, as this part is qualified to JEDEC standards rather than AEC-Q100/101/104/200. Ensure the SOT23 package dimensions align with the target PCB layout requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a low-cost, small-footprint N-channel MOSFET is required for low-voltage (20V) switching applications. It is suitable for circuits requiring low gate drive voltages, given the specified RDS(on) at VGS = 1.8V. Consider the thermal constraints of the SOT23 package, which limits total power dissipation to 350mW, making it appropriate for low-current signal switching or light load power management tasks.
Single FETs, MOSFETs Part Context
This device belongs to Diodes Incorporated's new generation of MOSFETs designed for high-efficiency power management. It utilizes a standard SOT23 surface-mount package, molded in green compound. The part is manufactured in facilities compliant with IATF 16949, though this specific model targets general industrial and consumer electronics rather than strict automotive qualification paths.
Single FETs, MOSFETs Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix listed on the manufacturer's website. No direct cross-model substitutes are explicitly confirmed in the provided documentation.
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