DMN2004WK-7

$0.34

Description：MOSFET N-CH 20V 540MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3bd388032d59 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2004WK-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 540MA SOT323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2004WK-7

Description：MOSFET N-CH 20V 540MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN2004WK-7

DMN2004WK-7

Single FETs, MOSFETs Overview

The DMN2004WK-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 540 mA at +25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum gate-source voltage (V_GSS) of ±8 V, a gate threshold voltage (V_GS(th)) of up to 1.0 V at 250 µA, and a static drain-source on-resistance (R_DS(on)) of 0.55 Ω at V_GS = 4.5 V and I_D = 540 mA. Input capacitance (C_iss) is rated at a maximum of 150 pF.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient power handling
Low gate threshold voltage for easy drive compatibility
ESD protection rated up to 2 kV
Qualified to JEDEC standards for high reliability

Single FETs, MOSFETs Applications

Power management circuits
Load switching applications
General-purpose low-voltage switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packaging configuration with a quantity of 3000 units per carrier. Confirm that the component meets RoHS 3 compliance requirements and is halogen-free if environmental specifications are critical for the intended assembly process. Ensure the package type matches the SOT323 footprint in the design layout.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with a 20 V rating and moderate current capability is required. The SOT323 package is suitable for space-constrained designs. Consider the thermal resistance of 625 °C/W and the 200 mW power dissipation limit when designing heat dissipation strategies for steady-state operations.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2004 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed as a lead-free, fully RoHS compliant device utilizing a molded plastic 'Green' molding compound. The product is distinct from automotive-compliant variants, such as the DMN2004WKQ, which are documented under separate datasheets.

Single FETs, MOSFETs Replacement Considerations

The automotive-compliant variant DMN2004WKQ serves as a qualified alternative for high-reliability automotive applications. Verify pinout compatibility and ensure the replacement meets the specific thermal and electrical requirements of the original design.

Single FETs, MOSFETs FAQ

Is the DMN2004WK-7 qualified for automotive applications?

No, this specific part number is not automotive qualified. An automotive-compliant version, designated as DMN2004WKQ, is available under a separate datasheet.