DMN2005DLP4K-7

Overview

The DMN2005DLP4K-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1310-6 package with a maximum drain-source voltage of 20V and a continuous drain current of 300mA per element. The device exhibits low on-resistance, ranging from 0.35Ω to 3.5Ω depending on gate drive conditions. It operates within a temperature range of -65°C to +150°C and includes ESD protection for the gate terminal.

Feature Summary

• Dual N-channel configuration in an ultra-low profile surface mount package
• Low static drain-source on-resistance for efficient power handling
• Very low gate threshold voltage enabling fast switching speeds
• ESD protected gate structure with fully lead-free and RoHS compliant construction

Applications

• Battery protection circuits
• Power management systems
• Load switch applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the X2-DFN1310-6 case dimensions align with the target PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 standards during storage and assembly processes.

Selection Notes

Select this component when space-constrained designs require a dual MOSFET solution. The low gate threshold voltage makes it suitable for low-voltage logic control interfaces. Evaluate thermal resistance parameters against the expected ambient operating conditions to ensure junction temperatures remain within safe limits.

Part Context

This part belongs to Diodes Incorporated's portfolio of small-signal MOSFETs designed for portable electronics. The X2-DFN1310-6 package provides a compact form factor compared to traditional SOT-23 or SC-70 alternatives. It serves as a discrete semiconductor solution for managing power distribution in mobile devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.