DMN2005K-7

$0.43

Description：MOSFET N-CH 20V 300MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b99701feb91c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2005K-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 300MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2005K-7

Description：MOSFET N-CH 20V 300MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.7V
Rds On (Max) @ Id, Vgs：1.7Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id：900mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2005K-7

DMN2005K-7

Single FETs, MOSFETs Overview

The DMN2005K-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20 V and a continuous drain current of 300 mA, with a pulsed current rating of 600 mA. The device operates within a junction temperature range of -55°C to +150°C and has a total power dissipation of 350 mW. Electrical characteristics include a gate threshold voltage maximum of 0.9 V and a static drain-source on-resistance of up to 3.5 Ω at VGS = 1.8 V. Dynamic parameters specify a total gate charge of 0.5 nC and input capacitance of 36.0 pF.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package for compact circuit designs
Very low gate threshold voltage enabling efficient drive requirements
ESD protected gate structure for enhanced reliability
Totally lead-free and fully RoHS compliant construction

Single FETs, MOSFETs Applications

Automotive applications requiring specific change control
Low voltage switching circuits
Battery-powered portable devices

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number DMN2005K-7 before procurement. Confirm that the supplier provides documentation verifying compliance with RoHS 3 and AEC-Q101 standards if automotive qualification is required. Ensure the packaging corresponds to the specified tape and reel format containing 3000 units per reel. Cross-reference datasheet revision DS30734 Rev. 10-2 for accurate electrical specifications during integration.

Single FETs, MOSFETs Selection Notes

Select this component when a small SOT23 footprint is necessary for low-voltage switching applications. The low gate threshold voltage makes it suitable for systems driven by low logic levels. Consider the thermal resistance of 357 °C/W when designing heat dissipation strategies for high ambient temperatures. Verify that the 20 V breakdown voltage aligns with the system's maximum operating voltage constraints.

Single FETs, MOSFETs Part Context

This component belongs to the DMN2005 series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 case. The product line emphasizes green manufacturing practices, being halogen and antimony free. It is designed for general-purpose switching and amplification tasks in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' SOT23 packages without validating pinout and electrical limits against the original datasheet.