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DMN2005LPK-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 440MA 3DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2005LPK-7
- Description：MOSFET N-CH 20V 440MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：440mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：450mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
Single FETs, MOSFETs datasheet and documents for DMN2005LPK-7
Single FETs, MOSFETs Overview
The DMN2005LPK-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1006-3 surface-mount package. It features a drain-source voltage (VDSS) of 20 V and a continuous drain current (ID) of 440 mA at +25°C. The device has a maximum power dissipation (PD) of 450 mW and a thermal resistance (RθJA) of 218 °C/W. Electrical characteristics include a gate threshold voltage (VGS(th)) ranging from 0.53 V to 1.2 V, and a static drain-source on-resistance (RDS(ON)) with a maximum value of 3.5 Ω at VGS = 4 V and ID = 10 mA. Operating and storage temperatures range from -65°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Ultra-small surface mount package for compact designs
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
- ESD protected gate
Single FETs, MOSFETs Applications
- Portable electronics
- Battery-powered devices
- Low-voltage load switches
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard 3,000 units per reel packaging configuration as documented in the official datasheet. Confirm that the component meets AEC-Q101 standards if automotive-grade reliability is required for the intended application environment.
Single FETs, MOSFETs Selection Notes
Select this component when a low-cost, small-footprint N-channel MOSFET is needed for low-current switching applications. Ensure the design accommodates the relatively high RDS(ON) compared to larger packages. Verify that the 20 V rating provides sufficient margin for the target circuit's supply voltage.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2005 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series offers various package options including SOT-23 and DFN types, catering to different space and performance requirements within consumer and industrial electronics markets.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent parts or direct replacements. Cross-reference pinouts, electrical ratings, and package dimensions before substitution.
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