DMN2005UFG-13

$0.42

Description：MOSFET N-CH 20V 18.1A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a98db9599c9a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2005UFG-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 18.1A PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2005UFG-13

Description：MOSFET N-CH 20V 18.1A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：6495 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.05W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN2005UFG-13

DMN2005UFG-13

Single FETs, MOSFETs Overview

The DMN2005UFG-13 is a 20V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 4.6mΩ at VGS=4.5V and 8.7mΩ at VGS=2.5V, with a continuous drain current rating of 50A at TC=+25°C. The device has a gate threshold voltage range of 0.4V to 1.2V and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low RDS(ON) minimizes on-state losses for high-efficiency power management
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
100% UIS & Rg tested

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets AEC-Q101 standards if automotive compliance is required, noting that an automotive-compliant variant may be available under a separate datasheet designation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-state resistance and superior switching performance. Ensure the design accommodates the thermal characteristics, specifically the junction-to-ambient thermal resistance values provided for different mounting conditions. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction.

Single FETs, MOSFETs Part Context

This part belongs to the Diodes Incorporated DMN2005 series of N-channel enhancement mode MOSFETs. It utilizes the PowerDI3333-8 case style, which is designed to provide a small footprint while maintaining thermal efficiency. The series is engineered to minimize on-state resistance without compromising switching capabilities.