DMN2005UFGQ-7

$0.34

Description：MOSFET N-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6d0c83777e1d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2005UFGQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 18A PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2005UFGQ-7

Description：MOSFET N-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：6495 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.05W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN2005UFGQ-7

DMN2005UFGQ-7

Single FETs, MOSFETs Overview

The DMN2005UFGQ-7 is a 20V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage of 20V and continuous drain currents of 50A at TC=+25°C or 18A at TA=+25°C. The static drain-source on-resistance is 4.6mΩ max at VGS=4.5V and 8.7mΩ max at VGS=2.5V, both tested at ID=13.5A. Gate threshold voltage ranges from 0.4V to 1.2V. Total gate charge is 68.8nTyp at VGS=4.5V. Operating temperature spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low RDS(ON) minimizes on-state losses
Small-form factor thermally efficient package enables higher density end products
Occupies 33% of the board area occupied by SO-8 enabling smaller end product
100% unclamped inductive switching test in production ensures more reliable and robust end application

Single FETs, MOSFETs Applications

Motor Control
Load Switch
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm AEC-Q101 qualification and PPAP capability requirements for automotive supply chains. Ensure compliance with RoHS and halogen-free standards as defined by the manufacturer. Cross-reference datasheet revision numbers to validate electrical characteristics and thermal parameters.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current handling within a compact footprint. Evaluate thermal resistance values based on PCB copper area and mounting conditions. Consider gate threshold voltage limits for logic compatibility. Verify that operating temperatures remain within the specified -55°C to +150°C range for the intended environment.

Single FETs, MOSFETs Part Context

This device belongs to the DMN2005 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package designed for improved thermal performance compared to traditional leaded packages. The series targets automotive and industrial applications demanding high reliability and space efficiency.