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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 14.5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：14.5A
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1418pF @ 10V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：U-DFN2030-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN2008LFU-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 (Type B) surface-mount package with NiPdAu over copper leadframe terminals. The device provides a drain-source voltage rating of 20V and supports continuous drain currents up to 14.5A at +25°C. Static drain-source on-resistance ranges from 5.4mΩ at VGS=4.5V to 9.6mΩ at VGS=2.5V, both tested at ID=5.5A. Total gate charge is 18.7nC at VGS=4.5V and 42.3nC at VGS=10V. Operating temperature spans -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Low on-resistance optimized for high efficiency power management
- Integrated ESD protection diodes on each gate terminal
- Totally lead-free and fully RoHS compliant construction
Applications
- Power Management Functions
- Battery Pack Protection
- Load Switching Circuits
Procurement Notes
Verify the ordering suffix matches the required tape and reel quantity. The -13 suffix indicates packaging in reels of 10,000 units, while the -7 suffix corresponds to reels of 3,000 units. Confirm that the U-DFN2030-6 footprint aligns with the target PCB layout before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel topology is required within a small form factor. The low gate threshold voltage allows compatibility with lower drive voltages. Ensure thermal design accounts for the junction-to-ambient resistance of 123°C/W on standard FR-4 substrates without additional copper plating.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It utilizes the U-DFN2030-6 case style, which is designed for applications requiring minimal board space. The product is classified as a new generation MOSFET intended to minimize on-state resistance while maintaining switching performance.
Replacement Considerations
The DMN2008LFU-7 serves as an equivalent alternative with identical electrical characteristics but differs in packaging quantity, supplied in reels of 3,000 units instead of 10,000.
