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DMN2009UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2009UFDF-7
- Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：12.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27.9 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1083 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN2009UFDF-7
Single FETs, MOSFETs Overview
The DMN2009UFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². The device provides a drain-source voltage (BVDSS) rating of 20V. At TA = +25°C, the continuous drain current (ID) reaches 12.8A at VGS = 4.5V and 10.7A at VGS = 2.5V. The maximum static drain-source on-resistance (RDS(ON)) is 9mΩ at VGS = 4.5V and 13mΩ at VGS = 2.5V. Total power dissipation is rated at 1.3W in steady state.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features a low gate threshold voltage suitable for logic-level driving.
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
Single FETs, MOSFETs Applications
- General purpose interfacing switches
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable regulatory standards required for the target market. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Review the datasheet for any automotive qualification requirements if the application demands specific change control or IATF 16949 manufacturing certification.
Single FETs, MOSFETs Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage switching applications. The U-DFN2020-6 package offers a small footprint ideal for space-constrained designs. Evaluate the thermal resistance characteristics against the expected operating temperature range and duty cycle. Consider the gate charge parameters for driving circuit compatibility in high-frequency switching scenarios.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type F) package. The device is designed for general-purpose use and power management functions, offering a balance between low on-resistance and fast switching capabilities within a compact form factor.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing should be performed based on matching electrical parameters, package dimensions, and pinout configurations to ensure functional compatibility without modification.
Single FETs, MOSFETs FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (BVDSS) rating is 20V.
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(TH)) ranges from 0.5V to 1.4V under specified test conditions.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q100/101/104/200 qualification, customers must contact Diodes Incorporated directly.
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