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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 11A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：11A
- Rds On (Max) @ Id, Vgs：7mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：2665pF @ 10V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2535-6
- Grade：-
- Qualification：-
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Overview
The DMN2010UDZ-7 is a dual N-channel MOSFET manufactured by Diodes Incorporated, housed in a U-DFN2535-6 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 20V and a continuous drain current (ID) of 11A. The device exhibits a maximum on-resistance (Rds(on)) of 7 mΩ at a gate-source voltage of 4.5V. Gate charge (Qg) is specified as 33.2 nC at 4.5V. The component operates within a temperature range of -55°C to +150°C and complies with RoHS directives.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Low on-resistance for enhanced power efficiency
- High current handling capability suitable for load switching
- Compliant with environmental standards including RoHS
Applications
- Load switching applications
- Power management circuits
- Consumer electronics power stages
- Industrial control systems
Procurement Notes
Verify the specific manufacturer part number against official Diodes Incorporated documentation to ensure authenticity. Confirm that the received components match the U-DFN2535-6 package dimensions and pinout. Check for compliance with relevant environmental regulations such as RoHS. Ensure storage conditions maintain component integrity prior to assembly.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Consider the 20V rating and 11A current capacity for appropriate load requirements. Evaluate the 7 mΩ on-resistance for thermal management needs. Verify compatibility with the target PCB footprint and reflow soldering profiles.
Part Context
This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the MOSFET category. The manufacturer specializes in high-quality analog and power solutions for automotive, industrial, computing, and consumer markets. The DMN series focuses on providing efficient power switching capabilities in small form factors.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference electrical parameters such as voltage, current, and resistance before considering other manufacturers' parts. Ensure mechanical compatibility with the U-DFN2535-6 package if substituting.
