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DMN2011UFDE-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 11.7A 6UDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2011UFDE-7
- Description：MOSFET N-CH 20V 11.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：11.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：2248 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：610mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
Single FETs, MOSFETs datasheet and documents for DMN2011UFDE-7
Single FETs, MOSFETs Overview
The DMN2011UFDE is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 20V and a continuous drain current of 11.7A at 25°C. The device exhibits a low on-resistance of 9.5mΩ at VGS=4.5V and 11mΩ at VGS=2.5V. It operates within a temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package with a 0.6mm profile.
Single FETs, MOSFETs Feature Summary
- Low profile design suitable for space-constrained applications
- Integrated ESD protection on the gate terminal
- Qualified to AEC-Q101 standards for automotive reliability
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against official documentation, as it determines reel size and quantity per reel. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by project specifications. Ensure the U-DFN2020-6 footprint matches the PCB layout guidelines provided in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component when a compact form factor is required alongside high efficiency power management capabilities. The low on-resistance supports high current handling in small packages. Verify thermal performance under expected load conditions, as power dissipation varies significantly based on mounting area and ambient temperature constraints.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel MOSFETs. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency applications requiring robust electrical characteristics in miniature surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the host circuit board.
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