DMN2011UTS-13

$0.71

Description：MOSFET N-CH 20V 21A 8TSSOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6f5803204529 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2011UTS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 21A 8TSSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2011UTS-13

Description：MOSFET N-CH 20V 21A 8TSSOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：11mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2248 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-TSSOP
Package / Case：8-TSSOP (0.173", 4.40mm Width)

Single FETs, MOSFETs datasheet and documents for DMN2011UTS-13

DMN2011UTS-13

Single FETs, MOSFETs Overview

The DMN2011UTS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source voltage rating and an 8-pin TSSOP surface-mount package. The device provides a maximum on-resistance of 11mΩ at VGS=4.5V and 13mΩ at VGS=2.5V, supporting continuous drain currents up to 21A at TC=+25°C. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.0V, total gate charge of 24nC at VGS=4.5V, and a junction temperature operating range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance optimized for high-efficiency power management applications
Low gate threshold voltage enabling efficient drive requirements
ESD protected gate structure with integrated protection diode
Qualified to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

Battery management systems
DC-DC converters
General power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's green product specifications. Ensure the procurement channel is authorized to guarantee authenticity and traceability of the AEC-Q101 qualified parts.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current switching solution is required in a compact TSSOP-8 footprint. The device is suitable for designs needing low RDS(ON) at both 4.5V and 2.5V gate drive levels. Consider the thermal resistance characteristics and power dissipation limits relative to the expected ambient or case temperatures during operation.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2011 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications requiring robust performance in small form factors.