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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 13A X3-DSN2718
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta)
- Rds On (Max) @ Id, Vgs：9mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：2417pF @ 10V
- Power - Max：820mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X3-DSN2718-6
- Grade：-
- Qualification：-
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Overview
The DMN2012UCA6-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in the X3-DSN2718-6 form factor. It features a source-source breakdown voltage (BV_DSS) of 24V and a typical on-resistance (R_DS(on)) of 7.4mΩ at V_GS = 3.8V. The device supports a maximum continuous source current of 13.0A at +25°C and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of 0.9V typ., total gate charge of 26.0nC, and input capacitance of 2417pF.
Feature Summary
- CSP package with a footprint of 2.70mm × 1.81mm and a low profile height of 0.21mm
- Integrated ESD protection for the gate terminal
- Totally lead-free and fully RoHS compliant construction
Applications
- Battery management systems
- Load switch implementations
- Battery protection circuits
Procurement Notes
Verify the exact ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets specific automotive quality standards if required, as standard versions may differ from AEC-Q101 qualified parts. Ensure compliance with halogen and antimony-free definitions during procurement validation.
Selection Notes
Select this component for applications requiring a compact CSP footprint with low on-state resistance. Evaluate thermal performance based on the specified RθJA values for both minimum pad layouts and full copper board mounts. Verify that the 24V breakdown voltage aligns with system requirements and check gate drive compatibility with the 0.9V threshold voltage.
Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes the X3-DSN2718-6 package, which is designed for high-efficiency power management applications where space constraints are critical. The series focuses on minimizing conduction losses while maintaining robust switching characteristics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Diodes Incorporated or authorized distributors for verified cross-reference data before implementing any alternative components.
