DMN2015UFDE-7

$0.58

Description：MOSFET N-CH 20V 10.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:50524f374f29 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMN2015UFDE-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 10.5A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2015UFDE-7

Description：MOSFET N-CH 20V 10.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：11.6mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45.6 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1779 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

Single FETs, MOSFETs datasheet and documents for DMN2015UFDE-7

DMN2015UFDE-7

Single FETs, MOSFETs Overview

The DMN2015UFDE-7 is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) package. It features a maximum drain-source breakdown voltage of 20V and a continuous drain current of 10.5A at VGS=4.5V. The device exhibits a typical on-resistance of 9.3mΩ at VGS=4.5V and 11.4mΩ at VGS=2.5V. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low profile design with a 0.6mm case height suitable for space-constrained applications
Optimized low on-resistance combined with superior switching performance
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free green device

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm reel size and quantity per reel. Confirm that the component meets all required environmental standards and packaging specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact footprint with a 4mm² PCB area. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Verify thermal dissipation requirements against the junction-to-ambient resistance values provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for high-efficiency power management applications where low on-state resistance and fast switching are critical.