DMN2015UFDF-13

Single FETs, MOSFETs Overview

The DMN2015UFDF-13 is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a U-DFN2020-6 (Type F) case. It features a maximum drain-source breakdown voltage of 20V and a continuous drain current of 15.2A at +25°C. The device exhibits a low on-resistance of 9mΩ at VGS = 4.5V and 15mΩ at VGS = 2.5V. Total gate charge is 19.3nC at VGS = 4.5V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
• Features a 0.6mm profile ideal for low profile applications with a PCB footprint of 4mm².
• Low gate threshold voltage enables effective drive at reduced gate voltages.

Single FETs, MOSFETs Applications

• General purpose interfacing switch
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if required by the target assembly specifications. Ensure the U-DFN2020-6 package dimensions align with the designated PCB footprint layout.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The 20V rating suits low-voltage power management circuits. Consider the thermal characteristics and junction-to-ambient resistance when designing heat dissipation strategies for steady-state or pulsed operation conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, green molding compound case. The product summary indicates it is designed to balance low RDS(ON) with fast switching capabilities for modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

DMN2015UFDF-7

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at +25°C?

The maximum continuous drain current is 15.2A at an ambient temperature of +25°C under steady-state conditions.

Is the device suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.