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DMN2015UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 15.2A 6UDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2015UFDF-7
- Description：MOSFET N-CH 20V 15.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：15.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42.3 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1439 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN2015UFDF-7
Single FETs, MOSFETs Overview
The DMN2015UFDF-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 15.2 A at +25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 9 mΩ at Vgs = 4.5 V and 15 mΩ at Vgs = 2.5 V. Total gate charge (Qg) is 19.3 nC at Vgs = 4.5 V. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 (Type F) package.
Single FETs, MOSFETs Feature Summary
- Low profile design with a 0.6 mm height suitable for space-constrained applications
- Minimized on-state resistance combined with optimized switching performance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free construction
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels before integration into production workflows.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage N-channel MOSFET with high current capability is required. Ensure the application gate drive voltage supports the specified Rds(on) thresholds. Verify thermal management requirements align with the provided junction-to-ambient resistance values for the target PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for high-efficiency power management applications requiring low on-resistance and superior switching characteristics within compact surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts or direct replacements. Do not substitute based solely on generic parameter matching without confirming pinout compatibility and electrical ratings.
Single FETs, MOSFETs FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) is rated at ±12 V.
Is this component suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q qualification, contact Diodes Incorporated directly as standard availability may vary.
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