Single FETs, MOSFETs DMN2020LSN-7 product image

DMN2020LSN-7

$0.40
  • Description:MOSFET N-CH 20V 6.9A SC59-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:15c4e9ffd7f9 Category: Brand:

  
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DMN2020LSN-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 6.9A SC59-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2020LSN-7

  • Description:MOSFET N-CH 20V 6.9A SC59-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.6 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:1149 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):610mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-59-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2020LSN-7

DMN2020LSN-7

Single FETs, MOSFETs Overview

The DMN2020LSN-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SC-59 surface-mount package. The device features a drain-source voltage rating of 20 V, a continuous drain current of 6.9 A at 25°C, and a maximum pulsed drain current of 30 A. Static drain-source on-resistance is specified at 18 mΩ (typical) at VGS = 4.5V. Gate-source voltage limits are ±12 V. Thermal characteristics include a power dissipation of 0.61 W and a junction-to-ambient thermal resistance of 204 °C/W. Operating and storage temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance for efficient conduction
  • Fast switching speed with low input capacitance
  • ESD protection up to 2kV
  • Qualified to AEC-Q101 standards

Single FETs, MOSFETs Applications

  • Power management circuits
  • Load switching applications
  • DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance requirements and lead-free design specifications as documented in the manufacturer's datasheet. Ensure the SC-59 package dimensions align with the target PCB footprint layout before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with a 20V breakdown voltage is required. The SC-59 package provides a small form factor suitable for space-constrained designs. Evaluate the 18 mΩ on-resistance against the expected load current to ensure acceptable power dissipation within the 0.61 W limit. Consider the 204 °C/W thermal resistance for adequate heat sinking or airflow requirements in the final assembly.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching capabilities in small surface-mount packages. The DMN2020LSN variant specifically targets 20V applications, offering a balance between current handling capacity and physical size for portable and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Diodes Incorporated parts in the DMN series sharing the SC-59 package and 20V rating. Verify pinout compatibility and electrical parameter overlaps, particularly RDS(on) and ID ratings, before substituting.

DMN2020LSN-7DMN2020LSN-7
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