DMN2020UFCL-7

$0.43

Description：MOSFET N-CH 20V 9A X1-DFN1616-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b8a1da9029ff Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2020UFCL-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 9A X1-DFN1616-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2020UFCL-7

Description：MOSFET N-CH 20V 9A X1-DFN1616-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：14mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21.5 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1788 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：610mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1616-6 (Type E)
Package / Case：6-PowerUFDFN

Single FETs, MOSFETs datasheet and documents for DMN2020UFCL-7

DMN2020UFCL-7

Single FETs, MOSFETs Overview

The DMN2020UFCL-7 is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 9A at +25°C. The device offers a typical on-resistance of 14mΩ at VGS=4.5V and 20mΩ at VGS=2.5V. It utilizes an X1-DFN1616-6 Type E package with a 0.5mm profile, operates within a -55°C to +150°C temperature range, and is qualified to AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications by minimizing conduction losses while maintaining superior switching performance.
Features an ultra-thin off-board profile of 0.5mm, making it ideally suited for space-constrained thin electronic applications.
Includes an ESD protected gate structure to enhance reliability during handling and operation.
Qualified to AEC-Q101 standards for high reliability in automotive environments.

Single FETs, MOSFETs Applications

Power management functions
Load Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental specifications are mandatory for the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for 20V logic-level switching applications. Ensure the design accommodates the thermal resistance characteristics associated with the X1-DFN1616-6 package footprint and verify that the gate drive voltage aligns with the specified threshold and on-resistance parameters.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to provide a compact form factor suitable for modern portable electronics and automotive systems where board space and height restrictions are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified alternative part numbers. Do not substitute with generic equivalents without confirming pinout compatibility, electrical ratings, and package dimensions against the original datasheet.