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The DMN2024UVTQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source voltage rating and a maximum on-resistance of 28mΩ at VGS = 2.5V with a continuous drain current of 5A. The device operates within a temperature range of -55°C to +150°C and has a total power dissipation of 1.6W on a high-coverage FR-4 PCB. Packaged in a TSOT26 case, it includes ESD protection for the gate terminal.
Verify the component against the official Diodes Incorporated datasheet DS42664 Rev. 2-2 to confirm authenticity. Ensure the ordering suffix matches the required packaging quantity, as the -13 suffix indicates a 10,000-unit tape and reel configuration. Cross-reference the date code markings with manufacturer guidelines to validate production year and month.
Select this component when a 20V N-channel MOSFET with low on-resistance is required for space-constrained designs. The TSOT26 package provides a compact footprint suitable for surface-mount assembly. Consider the thermal resistance characteristics and ensure adequate PCB copper area is available to support the specified power dissipation ratings under operating conditions.
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The DMN2024UVTQ variant specifically targets automotive environments requiring strict quality control and reliability standards. It is designed to replace older discrete solutions with integrated features like ESD protection in a small outline package.
Check for equivalent parts such as the DMN2024UVTQ-7 if a smaller 3,000-unit tape and reel quantity is needed instead of the standard 10,000-unit reel.