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DMN2025U-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V-24V SOT23 T&R 1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2025U-13
- Description：MOSFET BVDSS: 8V-24V SOT23 T&R 1
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for DMN2025U-13
Single FETs, MOSFETs Overview
The DMN2025U-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source breakdown voltage and a maximum continuous drain current of 5.6A at +25°C. The device offers a low on-resistance of 27mΩ at VGS=4.5V and 35mΩ at VGS=2.5V. Packaged in a SOT23 surface-mount housing, it supports a junction temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
Single FETs, MOSFETs Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
- Motor controls
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance and is halogen-free. Ensure the design accommodates the specified thermal resistance values under the intended PCB copper layout conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a compact SOT23 package is required for 20V applications. The device is suitable for designs needing low conduction losses at standard logic-level gate voltages. Evaluate the thermal performance against the 162°C/W junction-to-ambient resistance for minimum pad layouts.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free SOT23 package. The product is designed to minimize on-state resistance while maintaining superior switching performance for efficient power conversion.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Diodes Incorporated parts in the DMN series for pin-compatible alternatives. Verify that any substitute maintains the 20V rating and comparable RDS(ON) specifications within the SOT23 form factor.
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