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DMN2025U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V-24V SOT23 T&R 3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2025U-7
- Description：MOSFET BVDSS: 8V-24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：27mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.9 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：485 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2025U-7
Single FETs, MOSFETs Overview
The DMN2025U-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a SOT23 housing. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 5.6A at +25°C. The device offers low on-resistance, specified as 27mΩ max at VGS = 4.5V and 35mΩ max at VGS = 2.5V. Total power dissipation reaches 0.8W with a thermal resistance (RθJA) of 162°C/W under standard conditions. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
- Motor controls
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packing quantity. The DMN2025U-7 designation corresponds to a tape and reel carrier containing 3000 units. Confirm that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen-free requirements, before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a compact SOT23 package is required for 20V applications. Ensure the design accommodates the 5.6A continuous current limit at +25°C and the associated thermal constraints. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2025U series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The product line focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN2025U-7 variant specifically utilizes a SOT23 package for surface-mount assembly.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, ID, and RDS(ON). Verify package compatibility and thermal characteristics before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
