DMN2025UFDF-7

$0.43

Description：MOSFET N-CH 20V 6.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:008d4deab8f3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2025UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 6.5A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2025UFDF-7

Description：MOSFET N-CH 20V 6.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：486 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN2025UFDF-7

DMN2025UFDF-7

Single FETs, MOSFETs Overview

The DMN2025UFDF-7 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². The device provides a maximum drain-source on-resistance (RDS(ON)) of 25mΩ at VGS=4.5V, supporting a continuous drain current of 6.5A at TA=+25°C. Key electrical parameters include a gate threshold voltage range of 0.5V to 1.0V, total gate charge of 5.9nC at VGS=4.5V, and a thermal resistance junction-to-ambient of 170°C/W.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features an ultra-low profile case construction ideal for space-constrained low height designs.
Incorporates integrated ESD protection on the gate terminal to enhance component robustness.

Single FETs, MOSFETs Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm reel size and quantity per reel specifications. Ensure compliance requirements such as RoHS status and halogen-free definitions align with project constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a compact N-channel MOSFET with low RDS(ON) characteristics. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient resistance values under your specific board layout conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2025UFDF series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 surface mount package type, which is characterized by its small physical dimensions and exposed pad design for improved thermal performance.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Do not assume functional interchangeability with other N-channel MOSFETs without verifying pinout compatibility and electrical parameter limits.