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DMN2026UVT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 6.2A TSOT-26. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2026UVT-13
- Description：MOSFET N-CH 20V 6.2A TSOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.4 nC @ 8 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：887 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.15W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-23-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN2026UVT-13
Single FETs, MOSFETs Overview
The DMN2026UVT-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT-23-6 package with a drain-source voltage rating of 20V and a continuous drain current of 6.2A at +25°C. The device exhibits a maximum on-resistance of 24mΩ at VGS=4.5V and 32mΩ at VGS=2.5V. Total gate charge reaches 18.4nC at VGS=8V, while input capacitance is 887pF. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed capabilities
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Single FETs, MOSFETs Procurement Notes
Verify the component against official Diodes Incorporated datasheet DS37960 Rev. 1-2. Confirm the part number suffix matches the specific tape and reel packaging configuration. Ensure compliance requirements align with project specifications regarding halogen and antimony-free status.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low on-state resistance within a compact TSOT-23-6 footprint. Evaluate thermal performance based on the specified junction-to-ambient resistance values under steady-state and transient conditions. Consider the gate threshold voltage range when designing drive circuits.
Single FETs, MOSFETs Part Context
This N-channel MOSFET belongs to Diodes Incorporated's discrete semiconductor transistor lineup. It utilizes silicon technology and is housed in a molded plastic TSOT-26 case with a tin finish annealed over a copper leadframe. The device is designed to minimize on-state resistance while maintaining superior switching performance.
Single FETs, MOSFETs Replacement Considerations
The DMN2026UVT-7 is an alternative packaging option from the same manufacturer offering identical electrical characteristics in a 3,000-unit tape and reel format.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
