DMN2028UFDF-7

$0.49

Description：MOSFET N-CH 20V 7.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9538fd0bb627 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2028UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 7.9A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2028UFDF-7

Description：MOSFET N-CH 20V 7.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：907 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN2028UFDF-7

DMN2028UFDF-7

Single FETs, MOSFETs Overview

The DMN2028UFDF-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 7.9 A at +25°C ambient temperature. The device offers a maximum on-resistance (Rds(on)) of 25 mΩ at Vgs = 4.5V, 29 mΩ at Vgs = 2.5V, and 39 mΩ at Vgs = 1.8V. Total power dissipation is rated at 0.66 W at +25°C with a thermal resistance (RθJA) of 186 °C/W. It operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Features an integrated ESD protected gate structure.
Utilizes a low profile case material suitable for space-constrained designs.

Single FETs, MOSFETs Applications

Battery Management Applications
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel size specifications. Confirm that the component meets required environmental compliance standards such as RoHS and Halogen-free definitions prior to procurement. Ensure the selected variant matches the intended application requirements regarding thermal management and electrical ratings.

Single FETs, MOSFETs Selection Notes

Select this component based on its 20V rating and low on-resistance characteristics optimized for various gate drive voltages including 1.5V, 1.8V, 2.5V, and 4.5V. Consider the U-DFN2020-6 package dimensions and thermal resistance values when designing the PCB layout. Evaluate the fast switching speed and low gate threshold voltage for compatibility with the target control circuitry.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2028UFDF series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in a U-DFN2020-6 (Type F) package with a 0.6mm profile. The device is constructed using molded plastic green molding compound and is designed for surface mount technology applications requiring compact footprints.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists or datasheets for verified equivalent parts. Cross-reference key parameters such as voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without modifying the existing design.