DMN2028UFU-13

Overview

The DMN2028UFU-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 surface-mount package and operates with a drain-source voltage of 20V and a gate-source voltage of ±10V. The device provides a continuous drain current of 7.5A at +25°C, reducing to 6.0A at +70°C. On-resistance is specified as 20.2mΩ maximum at VGS=4.5V and 23.5mΩ at VGS=2.5V. Gate threshold voltage ranges from 0.5V to 1.0V. Total power dissipation is rated at 0.9W steady state at +25°C. Operating and storage temperatures span from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes for each channel.
• Optimized low on-state resistance combined with fast switching performance.
• Low input capacitance and low gate threshold voltage for efficient drive requirements.
• Totally lead-free construction fully compliant with RoHS directives.

Applications

• Power management functions
• Battery pack circuits
• Load switch applications

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS37945 Rev. 1-2 to confirm electrical parameters and mechanical dimensions. Ensure the ordering suffix matches the required tape and reel quantity. Confirm that the U-DFN2030-6 package footprint aligns with the design layout before finalizing procurement.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution with low on-resistance. Verify that the 20V drain-source voltage rating accommodates the circuit's peak voltages. Check that the gate drive voltage meets the minimum threshold for the desired on-resistance level. Ensure thermal management supports the specified power dissipation limits.

Part Context

This part belongs to the DMN2028 series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the U-DFN2030-6 case style, which is designed for surface mount applications. The series focuses on minimizing on-state resistance while maintaining superior switching characteristics for high efficiency power management.

Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in the U-DFN2030-6 package. Verify pinout compatibility and ensure equivalent or better electrical ratings for voltage, current, and on-resistance are met.

FAQ

What is the maximum pulsed drain current for the DMN2028UFU?

The maximum pulsed drain current (IDM) is 40A, based on a 10μs pulse duration and a 1% duty cycle.

Does the DMN2028UFU include internal protection features?

Yes, the device includes integrated gate protection diodes for both channels.

What is the typical total gate charge at VGS = 8V?

The typical total gate charge (Qg) is 18.4nC when tested at VDS = 10V and ID = 6.5A.