DMN2028UVT-13

Single FETs, MOSFETs Overview

The DMN2028UVT-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT-26 package with a drain-source voltage rating of 20V and a continuous drain current of 6.2A at +25°C. The device exhibits a maximum on-resistance of 24mΩ at VGS=4.5V and 32mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.5V, total gate charge of 8.3nC, and input capacitance of 856pF. Thermal characteristics specify a junction-to-ambient resistance of 105°C/W on FR-4 and an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
• Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
• Halogen and antimony free construction utilizing green molding compound.
• Low input capacitance and fast switching speed capabilities.

Single FETs, MOSFETs Applications

• DC-DC Converters
• Power Management Functions
• Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS and halogen-free status. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual mounting conditions. Validate pin configuration compatibility with the target PCB footprint prior to implementation.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring low on-resistance in a compact TSOT-26 package. Consider the 20V drain-source voltage limit and 6.2A continuous current rating for load requirements. Evaluate gate drive voltage levels, as on-resistance varies significantly between 2.5V and 4.5V thresholds. Assess thermal dissipation needs based on the specified power ratings and ambient temperature constraints.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT-26 case. The device is designed to balance low static conduction losses with dynamic switching efficiency, targeting modern portable and power-efficient electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, voltage ratings, and thermal characteristics when evaluating potential replacements.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±8V.

How does the on-resistance vary with gate voltage?

The maximum on-resistance is 24mΩ at VGS=4.5V and increases to 32mΩ at VGS=2.5V.

Is this component suitable for life support devices?

No, Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without express written approval.