DMN2029USD-13

Overview

The DMN2029USD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 20 V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 5.8 A at 25°C, with a maximum static drain-source on-resistance (RDS(on)) of 25 mΩ at VGS = 4.5 V and 35 mΩ at VGS = 2.5 V. Packaged in an SO-8 case, it exhibits a total gate charge (Qg) of 10.4 nC at VGS = 4.5 V and 18.6 nC at VGS = 8 V.

Feature Summary

• Dual N-channel configuration designed for high efficiency power management applications
• Qualified to AEC-Q101 standards for automotive reliability
• Totally lead-free and fully RoHS compliant construction

Applications

• DC-DC Converters
• Power Management Functions
• Backlighting

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS36127 Rev. 3-2 to confirm technical specifications. Ensure that the received parts match the ordering information provided in the documentation. Confirm compliance with environmental directives such as RoHS and check for any specific handling requirements related to moisture sensitivity level 1.

Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance and fast switching speed is required. The 20 V rating and 5.8 A continuous current capability suit compact power management designs. Verify that the operating conditions align with the specified thermal resistance and power dissipation limits for the chosen PCB layout.

Part Context

This part belongs to the DMN2029 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes an SO-8 package and is designed to minimize on-state resistance while maintaining superior switching performance. The product is intended for use in applications requiring high efficiency and reliability.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Do not assume cross-compatibility with other dual MOSFET packages without verifying pinout and electrical parameters.

FAQ

What is the maximum body diode forward current?

The maximum body diode forward current (IS) is 2.1 A.

Is the device suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the typical input capacitance?

The typical input capacitance (Ciss) is 1171 pF at VDS = 10 V and VGS = 0 V.