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DMN2029UVT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 6.8A TSOT26. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2029UVT-13
- Description：MOSFET N-CH 6.8A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.1 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：646 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN2029UVT-13
Single FETs, MOSFETs Overview
The DMN2029UVT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 20V. The device provides a continuous drain current of 6.8A at +25°C, with a maximum on-resistance of 24mΩ at VGS=4.5V and 32mΩ at VGS=2.5V. Total gate charge is 7.1nC, and input capacitance is 646pF. Power dissipation reaches 1.7W on FR-4 substrate with thermal vias.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
- Halogen and antimony free "Green" device construction.
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision (DS41245 Rev. 3 - 2) matches your design requirements. Confirm that the TSOT26 package dimensions align with your PCB footprint layout. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your actual operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance and fast switching are critical for 20V N-channel applications. Consider the TSOT26 package size constraints and verify that the 6.8A continuous current rating meets your load requirements. Evaluate thermal performance based on your board's copper area and via configuration.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a TSOT26 case. The product is designed for surface mount installation and is intended for use in compact electronic designs requiring efficient power switching capabilities.
Single FETs, MOSFETs Replacement Considerations
Check for alternative part numbers within the same DMN series or other manufacturers offering similar 20V N-channel MOSFETs in TSOT26 packages. Verify pinout compatibility and electrical parameter equivalence before substitution.
Single FETs, MOSFETs FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (BVDSS) is rated at 20V.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, contact Diodes Incorporated directly as standard parts may not meet these specific change control requirements.
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