DMN2030UCA4-7

$0.12

Description：MOSFET 2N-CH 20V 6.3A X4-DSN1111
Series：-

SKU:d5211a422eb4 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 6.3A X4-DSN1111
Series：-
Mfr：Diodes Incorporated
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6.3A (Ta)
Rds On (Max) @ Id, Vgs：32mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs：5.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：523pF @ 10V
Power - Max：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-XFBGA, DSBGA
Supplier Device Package：X4-DSN1111-4
Grade：-
Qualification：-

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DMN2030UCA4-7

Overview

The DMN2030UCA4-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X4-DSN1111-4 package with dimensions of 1.15mm x 1.15mm and a typical height of 0.120mm. The device provides a source-source breakdown voltage (BVSSS) of 20V and a continuous source current (IS) of 6.3A at +25°C. The typical static source-source on-resistance (RSS(ON)) is 23.4mΩ at VGS = 3.8V. Total gate charge (Qg) is 5.6nC, and power dissipation reaches 1.9W on FR-4 material. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration integrated into a single low-profile CSP footprint.
Designed to minimize on-state resistance while maintaining superior switching performance.
Totally lead-free, fully RoHS compliant, and halogen/antimony free green device.

Applications

Battery management systems
Load switches
Battery protections

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3000 units per carrier. Confirm that the component meets AEC-Q100/101/104/200 qualification requirements if intended for automotive applications requiring specific change control and PPAP capability. Ensure compatibility with NiAu terminal finishes for solderability.

Selection Notes

Select this component when space constraints require a compact 1.15mm x 1.15mm footprint with dual channel functionality. Evaluate thermal resistance values based on the specific PCB copper area and layer configuration used in the design. Consider the 20V breakdown voltage and 6.3A continuous current limits against the maximum expected load conditions.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X4-DSN1111-4 package type, which is distinct from standard SOT or DFN packages due to its specific dual-channel layout and low profile dimensions designed for high-density surface mount applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering any alternative components from other manufacturers.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) rating is ±12V.

Is the device suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, and PPAP capability, customers must contact Diodes Incorporated directly as these are special manufacturing requirements.