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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6.7A 8TSSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.7A (Ta)
- Rds On (Max) @ Id, Vgs：26mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：570pF @ 10V
- Power - Max：890mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN2040LTS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8L surface-mount package and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a drain-source voltage (VDSS) of 20V, a continuous drain current (ID) of 6.7A at 25°C, and a typical static drain-source on-resistance (RDS(on)) of 19mΩ at VGS=4.5V. The device exhibits a gate threshold voltage (VGS(th)) between 0.5V and 1.2V, with a total gate charge (Qg) of 5.2nC. Power dissipation is rated at 0.89W, supported by a thermal resistance (RθJA) of 140°C/W.
Feature Summary
- Dual N-channel configuration for integrated circuit design
- Low on-resistance for efficient power handling
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for high reliability
Applications
- Power management circuits requiring dual channel control
- Battery protection systems
- Load switch applications in portable devices
Procurement Notes
Verify the component authenticity against the official Diodes Incorporated datasheet DS31941 Rev. 2-2. Confirm the ordering suffix '-13' corresponds to the specified 2500-unit tape and reel packaging format. Ensure that the procurement source provides traceability documentation consistent with the manufacturer's quality standards and RoHS compliance requirements.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The TSSOP-8L package offers a balance between thermal performance and board space efficiency. Consider the 20V rating and 6.7A current capability against the specific load requirements of the target circuit design.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. The 'DMN' prefix indicates the product family, while '2040' denotes the voltage and resistance characteristics. The suffix '-13' specifies the standard tape and reel packaging quantity provided by the manufacturer.
Replacement Considerations
Consult the official Diodes Incorporated database for verified cross-reference parts. Ensure any substitute maintains identical pinout compatibility, voltage ratings, and thermal characteristics to guarantee circuit functionality without redesign.
