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DMN2040UVT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 6.7A TSOT26 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2040UVT-7
- Description：MOSFET N-CH 20V 6.7A TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：667 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN2040UVT-7
Single FETs, MOSFETs Overview
The DMN2040UVT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 20V. The device provides a maximum on-resistance of 24mΩ at VGS=4.5V and 32mΩ at VGS=2.5V, supporting continuous drain currents of 6.7A and 5.3A respectively. Total gate charge is 7.5nC, with power dissipation rated at 1.2W to 1.6W depending on board conditions. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
- Utilizes a green molding compound that is halogen and antimony free.
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging quantity of 3,000 units per reel. Confirm the exact part number matches the required packaging format before finalizing procurement orders to ensure compatibility with automated assembly equipment.
Single FETs, MOSFETs Selection Notes
Select this component for circuits requiring low input capacitance and fast switching speeds within a 20V system. Evaluate thermal resistance values based on the specific PCB copper area and via configuration used in the design. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.
Single FETs, MOSFETs Part Context
This component belongs to the DMN2040 series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a TSOT26 case constructed from molded plastic. The device is designed to minimize self-heating effects during operation while maintaining robust electrical characteristics across varying temperatures.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative parts offering similar 20V ratings and comparable RDS(ON) values. Verify pinout compatibility with the TSOT26 package layout to ensure direct replacement feasibility without modifying the printed circuit board design.
Single FETs, MOSFETs FAQ
What is the maximum body diode forward current?
The maximum body diode forward current (IS) is 1.2 A under steady state conditions at TA = +25°C.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises. Graphs in the datasheet illustrate this variation from -55°C to +150°C for different gate-source voltages.
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