ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.7A
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：713pF @ 10V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
Download product information
Overview
The DMN2041UFDB-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type B) package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 4.7A at +25°C. The device offers low on-state resistance, rated at 40mΩ max at VGS = 4.5V and 65mΩ max at VGS = 2.5V. Key electrical parameters include a gate-source voltage (VGSS) of ±12V, total gate charge (Qg) of 8nC at VGS = 4.5V, and input capacitance (Ciss) of 713pF. Thermal characteristics specify a steady-state power dissipation (PD) of 1.4W and a junction-to-ambient thermal resistance (RθJA) of 92°C/W.
Feature Summary
- Dual N-channel configuration with integrated ESD protection diodes on both gates.
- Low profile construction with a maximum height of 0.6mm.
- Totally lead-free and fully RoHS compliant, halogen and antimony free.
Applications
- Load Switch
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel quantity of 3,000 units. Confirm that the component meets all required environmental standards for the target application before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a compact dual N-channel solution with low on-resistance. Ensure the operating gate voltage aligns with the specified thresholds for optimal RDS(ON). Verify that the thermal management design accommodates the specified junction-to-ambient thermal resistance under expected load conditions.
Part Context
This part belongs to the DMN2041 series of dual N-channel MOSFETs designed by Diodes Incorporated. It shares the same core electrical specifications as the DMN2041UFDB-13 variant, differing only in the standard tape and reel packaging quantity of 10,000 units instead of 3,000.
Replacement Considerations
The DMN2041UFDB-13 is a confirmed substitute offering identical electrical performance and pinout, distinguished solely by its 10,000-unit tape and reel packaging format.
FAQ
What is the maximum continuous drain current for the DMN2041UFDB-7?
The maximum continuous drain current is 4.7A at an ambient temperature of +25°C and 3.8A at +70°C.
Does the DMN2041UFDB-7 include internal gate protection?
Yes, the device includes ESD protected gates with integrated gate protection diodes for both channels.
What is the typical turn-on delay time for this MOSFET?
The typical turn-on delay time (tD(ON)) is 3.6ns, measured at VDD = 10V, VGS = 4.5V, RL = 2.3Ω, and RG = 1Ω.
