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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 2.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：278pF @ 10V
- Power - Max：590mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN2046UVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and provides two independent channels within a single component. The device supports a drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) of ±12V. At VGS = 4.5V, the maximum on-resistance (RDS(ON)) is 90mΩ with a continuous drain current (ID) of 2.6A. At VGS = 2.5V, RDS(ON) is 130mΩ with an ID of 2.1A. The total gate charge (Qg) at VGS = 4.5V is 3.6nC. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact TSOT26 package
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gates
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier format specified in the official datasheet. Confirm that the TSOT26 package dimensions and pinout match the target PCB layout requirements. Ensure compliance with RoHS 3 and halogen-free standards if required by the end application specifications.
Selection Notes
Select this component when space-constrained designs require two independent N-channel switches. Evaluate thermal performance based on the 213 °C/W junction-to-ambient thermal resistance on FR-4 substrates. Verify that the 20V breakdown voltage and 2.6A continuous current ratings exceed the peak operational demands of the specific circuit topology.
Part Context
This part belongs to Diodes Incorporated's DMN2046U series of dual N-channel MOSFETs. The 'VT' suffix indicates the TSOT26 surface-mount package variant. The '-13' suffix specifically denotes the 10,000-piece tape and reel packaging option, distinguishing it from the '-7' suffix which represents a 3,000-piece reel quantity.
Replacement Considerations
Check for other DMN2046U variants with different package suffixes such as DMN2046UFR4 or DMN2046U-13 if the TSOT26 footprint is not suitable. Verify electrical parameters against alternative dual MOSFETs from other manufacturers to ensure compatibility with existing gate drive voltages and thermal constraints.
