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DMN2046UW-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2046UW-13
- Description：MOSFET BVDSS: 8V~24V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：278 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Single FETs, MOSFETs datasheet and documents for DMN2046UW-13
Single FETs, MOSFETs Overview
The DMN2046UW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN1010-3 surface-mount package. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 3.2 A. Key electrical characteristics include a maximum on-resistance of 90 mOhms, a gate threshold voltage of 1.4 V, and a total gate charge of 3.6 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1.45 W.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode configuration
- Integrated body diode for synchronous rectification
- Low profile X2-DFN1010-3 surface mount package
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact reel quantities and tape-and-reel specifications. Ensure the ordering part number matches the required package variant and lead finish. Cross-reference datasheet revisions to confirm compliance with current RoHS standards before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low on-resistance in a compact footprint. Evaluate thermal performance based on the 1.45 W power dissipation limit and the thermal resistance characteristics of the X2-DFN1010-3 package. Confirm that the 20 V breakdown voltage provides adequate margin for the target circuit's operating conditions.
Single FETs, MOSFETs Part Context
This component belongs to the DMN2046UFR4 series of small signal field-effect transistors from Diodes Incorporated. These devices are designed for general-purpose switching applications where space constraints and efficiency are critical. The series offers optimized performance metrics for modern portable and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Do not assume compatibility with generic 20V N-channel MOSFETs without verifying pinout and electrical parameter alignment.
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