DMN2053UFDB-7

$0.09

Description：MOSFET 2N-CH 20V 4.6A 6UDFN
Series：-

SKU:55b762d42ef6 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 4.6A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V
Power - Max：820mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：-
Qualification：-

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DMN2053UFDB-7

Overview

The DMN2053UFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a maximum height of 0.6mm and a PCB footprint of 4mm². The device provides a drain-source breakdown voltage (BVDSS) of 20V and a continuous drain current (ID) of 4.6A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 35mΩ max at VGS = 4.5V and 43mΩ max at VGS = 2.5V. Total gate charge (Qg) is 3.6nC at VGS = 4.5V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact U-DFN2020-6 package
Optimized for low on-state resistance and superior switching performance
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Load switches
Power management functions
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a tape and reel quantity of 3,000 units. Confirm that the required packaging format aligns with manufacturing equipment capabilities. Ensure compliance with applicable environmental directives such as RoHS 2 and RoHS 3 during the purchasing process.

Selection Notes

Select this component when a dual N-channel MOSFET with a 20V rating and minimal board space is required. Evaluate thermal dissipation requirements based on the 0.82W power dissipation limit at +25°C without a copper plate. Consider the 4.6A continuous current capability for load switch applications. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 (Type B) surface-mount package. The product line targets high-efficiency power management solutions requiring small footprints and low profile heights.